ION-BEAM ANALYSIS OF EDGE EFFECTS IN AL/M/AL STRIPES

被引：5

作者：

GUO, XS ^{[1
]}

LANFORD, WA ^{[1
]}

RODBELL, KP ^{[1
]}

机构：

[1] IBM CORP,E FISHKILL FACIL,HOPEWELL JUNCTION,NY 12533

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1990年 / 45卷 / 1-4期

关键词：

D O I：

10.1016/0168-583X(90)90799-Z

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Al/M/Al stripes (with M = Hf, Ti or TiW) having widths from 0.5 to 200 μm were annealed in N2 and H2 gas. The interdiffusion between layers and hydrogen diffusion in from edges were studied by RBS and nuclear reaction analysis. For Hf and Ti systems, rapid hydrogen diffusion in from the edge was observed. However, this hydrogen did not affect interdiffusion between layers. Al/Hf/Al samples showed an edge-enhanced diffusion, which was likely caused by reactive ion etching (RIE) during processing. For the Ti-W system, the edge diffusion was reduced in H2 during annealing. © 1990.

引用

页码：123 / 125

页数：3

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