HYDROGEN CONCENTRATION PROFILES IN AS-DEPOSITED AND ANNEALED PHOSPHORUS-DOPED SILICON DIOXIDE FILMS

被引：13

作者：

XIE, JZ

MURARKA, SP

机构：

[1] RENSSELAER POLYTECH INST,CTR INTEGRATED ELECTR,TROY,NY 12180

[2] SUNY COLL BUFFALO,DEPT PHYS,BUFFALO,NY 14222

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 21期

关键词：

D O I：

10.1063/1.100495

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：2036 / 2038

页数：3

相关论文

共 12 条

[1] ADAMS AC, 1983, VLSI TECHNOLOGY, P116
[2] CHARACTERISTICS OF FAST SURFACE STATES ASSOCIATED WITH SIO2-SI AND SI3N4-SIO2-SI STRUCTURES
DEAL, BE
MACKENNA, EL
CASTRO, PL
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (07) : 997 - &
[3] IDENTIFICATION OF ELECTRON TRAPS IN THERMAL SILICON DIOXIDE FILMS
HARTSTEIN, A
YOUNG, DR
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (08) : 631 - 633
[4] Lanford W. A., 1983, ADV MAT CHARACTERIZA, P549
[5] NEW PRECISION TECHNIQUE FOR MEASURING CONCENTRATION VERSUS DEPTH OF HYDROGEN IN SOLIDS
LANFORD, WA
TRAUTVETTER, HP
ZIEGLER, JF
KELLER, J
[J]. APPLIED PHYSICS LETTERS, 1976, 28 (09) : 566 - 568
[6] MEASUREMENTS OF HYDROGEN IN METAL-OXIDE-SEMICONDUCTOR STRUCTURES USING NUCLEAR-REACTION PROFILING
MARWICK, AD
YOUNG, DR
[J]. JOURNAL OF APPLIED PHYSICS, 1988, 63 (07) : 2291 - 2298
[7] MURALI V, 1987, THESIS RENNSSALAER P
[8] AVALANCHE INJECTION CURRENTS AND CHARGING PHENOMENA IN THERMAL SIO2
NICOLLIAN, EH
GOETZBERGER, A
BERGLUND, CN
[J]. APPLIED PHYSICS LETTERS, 1969, 15 (06) : 174 - +
[9] COMPARISON OF PROPERTIES OF DIELECTRIC FILMS DEPOSITED BY VARIOUS METHODS
PLISKIN, WA
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (05): : 1064 - 1081
[10] ROLE OF HYDROGEN IN SIO2-FILMS ON SILICON
REVESZ, AG
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (01) : 122 - 130