EFFECT OF INTEGRATED-CIRCUIT METALLIZATION LINEWIDTH ON THE DISTRIBUTION OF ELECTROMIGRATION LIFETIMES

[1] Arzigian J. S., 1983, 21st Annual Proceedings on Reliability Physics 1983, P32, DOI 10.1109/IRPS.1983.361957

[2] ELECTROMIGRATION - A BRIEF SURVEY AND SOME RECENT RESULTS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (04) : 338 - &

[3] D'Heurle F., 1970, Applied Physics Letters, V16, P80, DOI 10.1063/1.1653108

[4] A MODEL FOR THE WIDTH DEPENDENCE OF ELECTROMIGRATION LIFETIMES IN ALUMINUM THIN-FILM STRIPES [J]. APPLIED PHYSICS LETTERS, 1980, 36 (12) : 968 - 970

[5] NIKAWA K, 1981, 19TH P ANN REL PHYS, P175

[6] ELECTROMIGRATION IN ALUMINUM CONDUCTORS WHICH ARE CHAINS OF SINGLE-CRYSTALS [J]. APPLIED PHYSICS LETTERS, 1981, 39 (02) : 165 - 168

[7] SCOGGAN GA, 1975, IEEE T ELECTRON DEV, P151, DOI 10.1109/IRPS.1975.362689

[8] BOROPHOSPHOSILICATE GLASS FOR VLSI DEVICE FABRICATION. [J]. Vacuum, 1985, 35 (10-11) : 441 - 443

[9] Vaidya S., 1980, 18th Annual Proceedings of Reliability Physics, P165, DOI 10.1109/IRPS.1980.362934

[10] LINEWIDTH DEPENDENCE OF ELECTROMIGRATION IN EVAPORATED AL-0.5-PERCENT CU [J]. APPLIED PHYSICS LETTERS, 1980, 36 (06) : 464 - 466

[1] Arzigian J. S., 1983, 21st Annual Proceedings on Reliability Physics 1983, P32, DOI 10.1109/IRPS.1983.361957

[2] ELECTROMIGRATION - A BRIEF SURVEY AND SOME RECENT RESULTS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (04) : 338 - &

[3] D'Heurle F., 1970, Applied Physics Letters, V16, P80, DOI 10.1063/1.1653108

[4] A MODEL FOR THE WIDTH DEPENDENCE OF ELECTROMIGRATION LIFETIMES IN ALUMINUM THIN-FILM STRIPES [J]. APPLIED PHYSICS LETTERS, 1980, 36 (12) : 968 - 970

[5] NIKAWA K, 1981, 19TH P ANN REL PHYS, P175

[6] ELECTROMIGRATION IN ALUMINUM CONDUCTORS WHICH ARE CHAINS OF SINGLE-CRYSTALS [J]. APPLIED PHYSICS LETTERS, 1981, 39 (02) : 165 - 168

[7] SCOGGAN GA, 1975, IEEE T ELECTRON DEV, P151, DOI 10.1109/IRPS.1975.362689

[8] BOROPHOSPHOSILICATE GLASS FOR VLSI DEVICE FABRICATION. [J]. Vacuum, 1985, 35 (10-11) : 441 - 443

[9] Vaidya S., 1980, 18th Annual Proceedings of Reliability Physics, P165, DOI 10.1109/IRPS.1980.362934

[10] LINEWIDTH DEPENDENCE OF ELECTROMIGRATION IN EVAPORATED AL-0.5-PERCENT CU [J]. APPLIED PHYSICS LETTERS, 1980, 36 (06) : 464 - 466