CHARACTERIZATION OF ION-IMPLANTED SILICON ANNEALED WITH A GRAPHITE RADIATION SOURCE

被引：12

作者：

WILSON, SR ^{[1
]}

GREGORY, RB ^{[1
]}

PAULSON, WM ^{[1
]}

DIEHL, HT ^{[1
]}

HAMDI, AH ^{[1
]}

MCDANIEL, FD ^{[1
]}

机构：

[1] N TEXAS STATE UNIV,DEPT PHYS,DENTON,TX 76203

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1983年 / 30卷 / 02期

关键词：

D O I：

10.1109/TNS.1983.4332627

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1734 / 1737

页数：4

共 21 条

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[7]

Hill C., 1981, Laser and Electron-Beam Solid Interactions and Materials Processing. Proceedings of the Materials Research Society Symposium, P361

[8] PULSED ELECTRON-BEAM ANNEALING ION-IMPLANTED MATERIALS - EQUIPMENT AND RESULTS [J].

LITTLE, RG ;

GREENWALD, AC .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1981, 28 (02) :1751-1753

[9] ACTIVATION OF ARSENIC-IMPLANTED SILICON USING AN INCOHERENT-LIGHT SOURCE [J].

POWELL, RA ;

YEP, TO ;

FULKS, RT .

APPLIED PHYSICS LETTERS, 1981, 39 (02) :150-152

[10]

Shah N. J., 1981, Laser and Electron-Beam Solid Interactions and Materials Processing. Proceedings of the Materials Research Society Symposium, P201

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