NEW MICROWAVE ION-SOURCE FOR HIGH-ENERGY ION IMPLANTER

被引:14
作者
AMEMIYA, K [1 ]
TOKIGUCHI, K [1 ]
KOIKE, H [1 ]
SEKI, T [1 ]
SAKUDO, N [1 ]
机构
[1] HITACHI LTD,NAKA WORKS,KATUTA,IBARAKI 312,JAPAN
关键词
D O I
10.1016/0168-583X(89)90140-7
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
引用
收藏
页码:87 / 89
页数:3
相关论文
共 11 条
[1]  
BUCKLEYGOLDER IM, 1987, 11TH P S ISIAT 87 TO, P549
[2]   USE OF ECR ION SOURCES AT THE AGRIPPA FACILITY [J].
DELAUNAY, M ;
DOUSSON, S ;
GELLER, R ;
JACQUOT, B ;
HITZ, D ;
LUDWIG, P ;
SORTAIS, P ;
BLIMAN, S .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 23 (1-2) :177-185
[3]   REVIEW OF JINR ELECTRON-BEAM ION SOURCES [J].
DONETS, ED .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1976, 23 (02) :897-903
[4]  
GELLER R, 1979, IEEE T NUCL SCI, V26, P2120
[5]  
MCKENNA C, 1986, NIKKEI MICRODEVICES, V16, P139
[6]  
PRAMANIK D, 1984, SOLID STATE TECHNOL, V27, P211
[8]   BEAM EXTRACTION EXPERIMENTS FROM MICROWAVE ION SOURCES [J].
TOKIGUCHI, K ;
SAKUDO, N ;
KOIKE, H .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1986, 57 (08) :1526-1530
[9]   NEW MICROWAVE ION-SOURCE FOR MULTIPLY CHARGED ION-BEAM PRODUCTION [J].
TOKIGUCHI, K ;
AMEMIYA, K ;
KOIKE, H ;
SAKUDO, N ;
SEKI, T .
VACUUM, 1988, 38 (06) :487-490
[10]  
WORDEMAN MR, 1981, IEEE T ELECTRON DEV, V81, P40