THE CHARACTERIZATION OF GAAS NIAUGE OHMIC CONTACTS ALLOYED WITH AN SIO2 OVERLAYER FOR USE IN AN ION-IMPLANTED MESFET TECHNOLOGY

被引：9

作者：

ALLAN, DA

THORP, SC

机构：

来源：

PHYSICA B & C | 1985年 / 129卷 / 1-3期

关键词：

D O I：

10.1016/0378-4363(85)90620-5

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

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页码：445 / 449

页数：5

相关论文

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[3] NEW EXPLANATION OF ND-1 DEPENDENCE OF SPECIFIC CONTACT RESISTANCE FOR N-GAAS
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[6] IMPROVED OHMIC PROPERTIES OF AU-GE CONTACTS TO THIN NORMAL-GAAS LAYERS ALLOYED WITH AN SIO2 OVERLAYER
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