STUDIES OF AU-GAAS (001) INTERFACES PREPARED BY MOLECULAR-BEAM EPITAXY .1. OVERLAYER GROWTH AND SCHOTTKY-BARRIER FORMATION

被引：17

作者：

KOBAYASHI, KLI

WATANABE, N

NARUSAWA, T

NAKASHIMA, H

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 58卷 / 10期

关键词：

D O I：

10.1063/1.336290

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3758 / 3765

页数：8

共 16 条

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[9] STRUCTURE STUDY OF AU-GAAS(001) INTERFACES BY HEIS, XPS, AND RHEED [J].

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[10] HIGH SCHOTTKY BARRIERS ON AND THERMALLY INDUCED PROCESSES AT THE AU-GAAS(110) INTERFACE [J].

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