DEFECT CENTERS IN HIGH-PURITY HYDRIDE VPE INDIUM-PHOSPHIDE

被引：15

作者：

SUN, SW ^{[1
]}

CONSTANT, AP ^{[1
]}

ADAMS, CD ^{[1
]}

WESSELS, BW ^{[1
]}

机构：

[1] NORTHWESTERN UNIV,CTR MAT RES,EVANSTON,IL 60201

来源：

JOURNAL OF CRYSTAL GROWTH | 1983年 / 64卷 / 01期

关键词：

D O I：

10.1016/0022-0248(83)90262-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

收藏

页码：149 / 157

页数：9

相关论文

共 14 条

[1] ZN-DOPED VAPOR-GROWN INP
CHEVRIER, J
HUBER, A
LINH, NT
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) : 815 - 817
[2] PHOTOCAPACITANCE EFFECTS OF DEEP TRAPS IN NORMAL-TYPE INP
CHIAO, SH
ANTYPAS, GA
[J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (01) : 466 - 468
[3] MULTILAYERED STRUCTURES OF EPITAXIAL INDIUM-PHOSPHIDE
CLARKE, RC
TAYLOR, LL
[J]. JOURNAL OF CRYSTAL GROWTH, 1975, 31 (DEC) : 190 - 196
[4] AN INVESTIGATION OF THE DEEP LEVEL PHOTO-LUMINESCENCE SPECTRA OF INP(MN), INP(FE), AND OF UNDOPED INP
EAVES, L
SMITH, AW
SKOLNICK, MS
COCKAYNE, B
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (07) : 4955 - 4963
[5] DEEP HOLE TRAPS IN VPE P-TYPE INP
INUISHI, M
WESSELS, BW
[J]. ELECTRONICS LETTERS, 1981, 17 (19) : 685 - 686
[6] INUISHI M, 1980, AIME ELECTRONIC MATE
[7] DEFECT STATES IN ELECTRON BOMBARDED N-INP
LEVINSON, M
BENTON, JL
TEMKIN, H
KIMERLING, LC
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (11) : 990 - 992
[8] NARITA S, 1968, JAPAN J APPL PHYS, V8, P500
[9] ROTH TJ, 1982, SEMICONDUCTOR GROWTH, P36
[10] SUN SW, 3 5 OPTOELECTRONICS