DOUBLY RESONANT 2ND-HARMONIC GENERATION OF 2.0 MU-M LIGHT IN COUPLED INGAAS ALAS QUANTUM-WELLS

被引:14
作者
CHUI, HC [1 ]
MARTINET, EL [1 ]
WOODS, GL [1 ]
FEJER, MM [1 ]
HARRIS, JS [1 ]
RELLA, CA [1 ]
RICHMAN, BI [1 ]
SCHWETTMAN, HA [1 ]
机构
[1] STANFORD UNIV,STANFORD PICOSECOND FEL CTR,WW HANSEN EXPTL PHYS LAB,STANFORD,CA 94305
关键词
D O I
10.1063/1.111276
中图分类号
O59 [应用物理学];
学科分类号
摘要
We demonstrate intersubband absorption and second harmonic generation (SHG) in asymmetric coupled In0.6Ga0.4As/AlAs n-type quantum wells (QWs) grown on a GaAs substrate. Intersubband absorption at 4.1 and 2.1 mum wavelengths, corresponding to the 1 to 2 and 1 to 3 transitions, respectively, are observed. SHG of 2.0 mum light is demonstrated in this doubly resonant QW. This is the shortest wavelength SHG to date in any n-type QW system. The second order nonlinear susceptibility chi(2) is measured using a free electron laser by interference of the second harmonic fields from the QW and substrate. At a pump wavelength of 4.0 mum, a large asymmetry in the SHG power with rotation angle of the sample arising from SHG from the QW is observed, and a chi(2) of magnitude 20+/-8 nm/V, approximately 100 times that of bulk GaAs, and phase 63-degrees+/-34-degrees relative to the GaAs substrate is measured. Comparison of both the linear and nonlinear properties to a simple model is discussed.
引用
收藏
页码:3365 / 3367
页数:3
相关论文
共 17 条
[1]   SINGLE-FREQUENCY GAINASSB/ALGAASSB QUANTUM-WELL RIDGE-WAVE-GUIDE LASERS EMITTING AT 2.1 MU-M [J].
CHOI, HK ;
EGLASH, SJ ;
CONNORS, MK .
APPLIED PHYSICS LETTERS, 1993, 63 (24) :3271-3272
[2]   INTERSUBBAND TRANSITIONS IN HIGH INDIUM CONTENT INGAAS/ALGAAS QUANTUM-WELLS [J].
CHUI, HC ;
LORD, SM ;
MARTINET, E ;
FEJER, MM ;
HARRIS, JS .
APPLIED PHYSICS LETTERS, 1993, 63 (03) :364-366
[3]   GROWTH-STUDIES ON IN0.5GA0.5AS/ALGAAS QUANTUM-WELLS GROWN ON GAAS WITH A LINEARLY GRADED INGAAS BUFFER [J].
CHUI, HC ;
HARRIS, JS .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (02) :1019-1022
[4]   SHORT-WAVELENGTH INTERSUBBAND TRANSITIONS IN INGAAS/ALGAAS QUANTUM-WELLS GROWN ON GAAS [J].
CHUI, HC ;
MARTINET, EL ;
FEJER, MM ;
HARRIS, JS .
APPLIED PHYSICS LETTERS, 1994, 64 (06) :736-738
[5]   OBSERVATION OF EXTREMELY LARGE QUADRATIC SUSCEPTIBILITY AT 9.6-10.8-MU-M IN ELECTRIC-FIELD-BIASED ALGAAS QUANTUM WELLS [J].
FEJER, MM ;
YOO, SJB ;
BYER, RL ;
HARWIT, A ;
HARRIS, JS .
PHYSICAL REVIEW LETTERS, 1989, 62 (09) :1041-1044
[6]   OBSERVATION OF 1.798 MU-M INTERSUBBAND TRANSITION IN INGAAS/ALAS PSEUDOMORPHIC QUANTUM-WELL HETEROSTRUCTURES [J].
HIRAYAMA, Y ;
SMET, JH ;
PENG, LH ;
FONSTAD, CG ;
IPPEN, EP .
APPLIED PHYSICS LETTERS, 1993, 63 (12) :1663-1665
[8]  
Kurtz S.H., 1975, QUANTUM ELECTRON, VI, P209
[9]   NONLINEAR SUSCEPTIBILITY OF GAP - RELATIVE MEASUREMENT AND USE OF MEASURED VALUES TO DETERMINE A BETTER ABSOLUTE VALUE [J].
LEVINE, BF ;
BETHEA, CG .
APPLIED PHYSICS LETTERS, 1972, 20 (08) :272-&
[10]   INVESTIGATION OF HIGH IN CONTENT INGAAS QUANTUM-WELLS GROWN ON GAAS BY MOLECULAR-BEAM EPITAXY [J].
LORD, SM ;
PEZESHKI, B ;
JUN, JSH .
ELECTRONICS LETTERS, 1992, 28 (13) :1193-1195