INTERSUBBAND TRANSITIONS IN HIGH INDIUM CONTENT INGAAS/ALGAAS QUANTUM-WELLS

被引：23

作者：

CHUI, HC

LORD, SM

MARTINET, E

FEJER, MM

HARRIS, JS

机构：

[1] Center for Nonlinear Optical Materials, Stanford University, Stanford

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 03期

关键词：

D O I：

10.1063/1.110044

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the first observation of intersubband transitions in InyGa1-yAs(Y=0.3,0.5)/AlGaAs quantum wells. These quantum wells were grown on a GaAs substrate with a linearly graded InGaAs buffer to achieve strain relaxation before growth of the quantum wells. Measured intersubband transition energies of 316 and 350 meV are among the largest ever reported. Asymmetric step In0.5Gao.5As/AlGaAs quantum wells designed for second harmonic generation measurements also demonstrate strong intersubband absorption at 224 meV corresponding to the 1-2 transition. With the large conduction band offsets (larger than 800 meV) available in this material system, extension to larger intersubband transitions energies for quantum well photodetector and nonlinear optics applications should be possible.

引用

收藏

页码：364 / 366

页数：3

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