LIGHT-EMITTING PATTERNS OF GALLIUM NITRIDE ELECTROLUMINESCENCE

[1] EFFECT OF DISLOCATIONS ON BREAKDOWN IN SILICON P-N JUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1958, 29 (07) : 1103 - 1110

[2] MECHANISM OF LIGHT PRODUCTION IN METAL-INSULATOR-SEMICONDUCTOR DIODES - GAN - MG VIOLET LIGHT-EMITTING DIODES [J]. SOLID-STATE ELECTRONICS, 1974, 17 (11) : 1171 - 1179

[3] MICROSTRUCTURAL OBSERVATIONS ON GALLIUM NITRIDE LIGHT-EMITTING DIODES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (09) : 1202 - 1207

[4] Pankove J. I., 1971, Journal of Luminescence, V4, P63, DOI 10.1016/0022-2313(71)90009-3

[5] BLUE ANTI-STOKES ELECTROLUMINESCENCE IN GAN [J]. PHYSICAL REVIEW LETTERS, 1975, 34 (13) : 809 - 812

[6] LOW-VOLTAGE BLUE ELECTROLUMINESCENCE IN GAN [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, 22 (09) : 721 - 724

[7] PANKOVE JI, 1971, OPTICAL PROCESSES SE, P203

[8] ETCHING OF GAN USING PHOSPHORIC-ACID [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (05) : 706 - 713

[9] SHINTANI A, TO BE PUBLISHED

[1] EFFECT OF DISLOCATIONS ON BREAKDOWN IN SILICON P-N JUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1958, 29 (07) : 1103 - 1110

[2] MECHANISM OF LIGHT PRODUCTION IN METAL-INSULATOR-SEMICONDUCTOR DIODES - GAN - MG VIOLET LIGHT-EMITTING DIODES [J]. SOLID-STATE ELECTRONICS, 1974, 17 (11) : 1171 - 1179

[3] MICROSTRUCTURAL OBSERVATIONS ON GALLIUM NITRIDE LIGHT-EMITTING DIODES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (09) : 1202 - 1207

[4] Pankove J. I., 1971, Journal of Luminescence, V4, P63, DOI 10.1016/0022-2313(71)90009-3

[5] BLUE ANTI-STOKES ELECTROLUMINESCENCE IN GAN [J]. PHYSICAL REVIEW LETTERS, 1975, 34 (13) : 809 - 812

[6] LOW-VOLTAGE BLUE ELECTROLUMINESCENCE IN GAN [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, 22 (09) : 721 - 724

[7] PANKOVE JI, 1971, OPTICAL PROCESSES SE, P203

[8] ETCHING OF GAN USING PHOSPHORIC-ACID [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (05) : 706 - 713

[9] SHINTANI A, TO BE PUBLISHED