SILICON OXYNITRIDE AND SILICON OXYNITRIDE-SILICON INTERFACE - A PHOTOEMISSION-STUDY

被引：3

作者：

COLUZZA, C

GIANETTI, C

FORTUNATO, G

PERFETTI, P

QUARESIMA, C

CAPOZI, M

机构：

[1] CNR,IST ELETTRON STATE SOLIDO,ROME,ITALY

[2] CNR,ISM,FRASCATI,ITALY

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 12期

关键词：

D O I：

10.1109/16.40931

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2821 / 2824

页数：4

共 14 条

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[9] QUANTITATIVE INFRARED CHARACTERIZATION OF PLASMA ENHANCED CVD SILICON OXYNITRIDE FILMS [J].

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