SUB-MICRON CHANNEL MOSFET USING FOCUSED BORON ION-BEAM IMPLANTATION INTO SILICON

被引：10

作者：

SHUKURI, S

WADA, Y

MASUDA, H

ISHITANI, T

TAMURA, M

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1984年 / 23卷 / 08期

关键词：

D O I：

10.1143/JJAP.23.L543

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L543 / L545

页数：3

共 8 条

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[2] ION-BEAM ASSISTED MASKLESS ETCHING OF GAAS BY 50 KEV FOCUSED ION-BEAM [J].

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[3] MASS-SEPARATED MICROBEAM SYSTEM WITH A LIQUID-METAL-ION SOURCE [J].

ISHITANI, T ;

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[4]

Kubema R. L., 1983, International Electron Devices Meeting 1983. Technical Digest, P566

[5] FET FABRICATION USING MASKLESS ION-IMPLANTATION [J].

KUBENA, RL ;

ANDERSON, CL ;

SELIGER, RL ;

JULLENS, RA ;

STEVENS, EH ;

LAGNADO, I .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04) :916-920

[6] FINE FOCUSED ION-BEAMS [J].

SELIGER, RL ;

KUBENA, RL ;

WANG, V .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1982, 21 (01) :3-10

[7]

TAMURA M, 1983, JPN J APPL PHYS, V22, pL698

[8]

TOYABE T, 1979, IEEE J SOLID STATE C, V14, P376

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