共 49 条
[1]
AKIMOTO K, 1981, APPL PHYS LETT, V39, P445
[2]
BEAN JC, 1980, APPL PHYS LETT, V37, P203
[3]
BEESON KW, 1985, 3 REFR MET SIL VLSI
[4]
BLOKHA VB, 1982, IZV AKAD NAUK SSSR N, V18, P805
[5]
EFFECTS OF DEPOSITION PARAMETERS ON THE GROWTH OF THERMAL OXIDE ON SILICIDES OVER SINGLE CRYSTAL SILICON.
[J].
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures,
1984, 2 (04)
:707-709
[6]
DHEURLE FM, 1980, J APPL PHYS, V51, P5976, DOI 10.1063/1.327517
[7]
FAIR J, 1983, 1983 TECHN PROGR P S, P6
[8]
FRASER DB, 1984, COMMUNICATION
[9]
FRASER DB, 1982, Patent No. 4337476
[10]
INFLUENCE OF DOPANTS AND DEPOSITION TEMPERATURES ON THE PROPERTIES OF TASI2/POLYSILICON FILMS AND THEIR THERMAL OXIDES
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1985, 3 (06)
:1668-1675