CALCULATIONS OF NATIVE DEFECTS AND IMPURITIES IN CUBIC GAN INCLUDING HIGH-PRESSURE EFFECTS

Using the Green-function matrix technique based on the linear muffin-tin orbital method in the atomic-spheres approximation we perform self-consistent calculations of the electronic structure for native defects and impurities in cubic GaN. Native defects as N and Ga vacancies and antisites and substitutional impurities: Zn, C and Ge in different charge states are investigated. Resulting positions of the defect levels are compared with tight-binding and pseudopotential calculations. High pressure behavior is also studied in comparison with some other theoretical and experimental data.