COMMENT ON THE INTERPRETATION OF THE ELECTRON-CAPTURE BY MULTIPHONON EMISSION AT NATIVE LEVELS IN LPE GALLIUM-ARSENIDE

被引：4

作者：

BURT, MG

机构：

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1982年 / 15卷 / 27期

关键词：

D O I：

10.1088/0022-3719/15/27/004

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：L965 / L968

页数：4

共 15 条

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[7]

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[8] WAVE-FUNCTIONS AND OPTICAL CROSS-SECTIONS ASSOCIATED WITH DEEP CENTERS IN SEMICONDUCTORS [J].

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[9] ELECTRIC-FIELD-INDUCED PHONON-ASSISTED TUNNEL IONIZATION FROM DEEP LEVELS IN SEMICONDUCTORS [J].

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[10]

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