GROWTH AND CHARACTERIZATION OF DIGITAL ALLOY QUANTUM-WELLS OF CDSE ZNSE

被引：13

作者：

LUO, H

SAMARTH, N

YIN, A

PAREEK, A

DOBROWOLSKA, M

FURDYNA, JK

MAHALINGAM, K

OTSUKA, N

PEIRIS, FC

BUSCHERT, JR

机构：

[1] PURDUE UNIV,SCH MAT ENGN,W LAFAYETTE,IN 47907

[2] GOSHEN COLL,DEPT PHYS,GOSHEN,IN 46556

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1993年 / 22卷 / 05期

关键词：

CDSE ZNSE; MIGRATION ENHANCED EPITAXY; MOLECULAR BEAM EPITAXY; QUANTUM WELLS;

D O I：

10.1007/BF02661615

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report a study of digital alloy quantum wells of CdSe/ZnSe grown by migration enhanced epitaxy. The quantum well regions consist of various numbers of periods of one monolayer of CdSe and three monolayers of ZnSe, and the barriers are ZnSe. It will be shown that the optical properties of such quantum wells are greatly affected by the structural quality of the digital alloy. Both structural and optical properties will be discussed. Such digital alloy quantum wells are shown to have excellent room temperature optical characteristics.

引用

收藏

页码：467 / 471

页数：5

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