LASER-INDUCED OXYGEN-ADSORPTION AND INTENSITY DEGRADATION OF POROUS SI

被引：18

作者：

ZHENG, XL ^{[1
]}

CHEN, HC ^{[1
]}

WANG, W ^{[1
]}

机构：

[1] SUNY ALBANY,DEPT CHEM,ALBANY,NY 12222

来源：

JOURNAL OF APPLIED PHYSICS | 1992年 / 72卷 / 08期

关键词：

D O I：

10.1063/1.352288

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

For light-emitting porous Si there has been a severe problem with instability and degradation in the light emission. We performed in situ photoluminescence measurements to monitor the degradation process under ambient atmosphere of different gases and in ultrahigh-vacuum environment. We found that laser induced oxygen adsorption is the major cause for the light emission degradation, while the laser heating effect can be excluded. We also found the degraded intensity can be partially recovered by reducing the surface oxygen concentration.

引用

页码：3841 / 3842

页数：2

共 5 条

[1] SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].