ANOMALOUS TEMPERATURE DEPENDENCIES OF PHOTOLUMINESCENCE FOR VISIBLE-LIGHT-EMITTING POROUS SI

被引：77

作者：

ZHENG, XL ^{[1
]}

WANG, W ^{[1
]}

CHEN, HC ^{[1
]}

机构：

[1] SUNY ALBANY, DEPT CHEM, ALBANY, NY 12222 USA

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 08期

关键词：

D O I：

10.1063/1.106482

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Porous Si has been prepared by the electrochemical anodization method. At room temperature it has a light-emission peak energy in the range of 1.50-2.06 eV. The results from variable-temperature photoluminescence (PL) show anomalous temperature dependencies of the spectral characteristics: the emission intensity increases with decreasing temperature until reaching an intensity maximum at about 100-200 K, then it decreases at lower temperatures; the emission energy shift with temperature has no fixed trend and varies with sampling point. Such dependencies are reversible with the two directions of temperature change. The above observations can be explained by phonon participation in the light-emission process of porous Si.

引用

收藏

页码：986 / 988

页数：3

相关论文

共 13 条

[1] AN EXPERIMENTAL AND THEORETICAL-STUDY OF THE FORMATION AND MICROSTRUCTURE OF POROUS SILICON [J].

BEALE, MIJ ;

BENJAMIN, JD ;

UREN, MJ ;

CHEW, NG ;

CULLIS, AG .

JOURNAL OF CRYSTAL GROWTH, 1985, 73 (03) :622-636

[2] SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].

CANHAM, LT .

APPLIED PHYSICS LETTERS, 1990, 57 (10) :1046-1048

[3] ATMOSPHERIC IMPREGNATION OF POROUS SILICON AT ROOM-TEMPERATURE [J].

CANHAM, LT ;

HOULTON, MR ;

LEONG, WY ;

PICKERING, C ;

KEEN, JM .

JOURNAL OF APPLIED PHYSICS, 1991, 70 (01) :422-431

[4] 3-DIMENSIONAL QUANTUM WELL EFFECTS IN ULTRAFINE SILICON PARTICLES [J].

FURUKAWA, S ;

MIYASATO, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (11) :L2207-L2209

[5] QUANTUM SIZE EFFECTS ON THE OPTICAL BAND-GAP OF MICROCRYSTALLINE SI-H [J].

FURUKAWA, S ;

MIYASATO, T .

PHYSICAL REVIEW B, 1988, 38 (08) :5726-5729

[6] ELECTROLUMINESCENCE IN THE VISIBLE RANGE DURING ANODIC-OXIDATION OF POROUS SILICON FILMS [J].

HALIMAOUI, A ;

OULES, C ;

BOMCHIL, G ;

BSIESY, A ;

GASPARD, F ;

HERINO, R ;

LIGEON, M ;

MULLER, F .

APPLIED PHYSICS LETTERS, 1991, 59 (03) :304-306

[7] OPTICAL STUDIES OF THE STRUCTURE OF POROUS SILICON FILMS FORMED IN P-TYPE DEGENERATE AND NON-DEGENERATE SILICON [J].

PICKERING, C ;

BEALE, MIJ ;

ROBBINS, DJ ;

PEARSON, PJ ;

GREEF, R .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (35) :6535-6552

[8]

STREET RA, 1984, SEMICONDUCT SEMIMET, V21, P197

[9] RECOMBINATION IN ALPHA-SI-H - AUGER EFFECTS AND NON-GEMINATE RECOMBINATION [J].

STREET, RA .

PHYSICAL REVIEW B, 1981, 23 (02) :861-868

[10] QUANTUM SIZE EFFECTS ON PHOTOLUMINESCENCE IN ULTRAFINE SI PARTICLES [J].

TAKAGI, H ;

OGAWA, H ;

YAMAZAKI, Y ;

ISHIZAKI, A ;

NAKAGIRI, T .

APPLIED PHYSICS LETTERS, 1990, 56 (24) :2379-2380