AN ALTERNATIVE MG PRECURSOR FOR P-TYPE DOPING OF OMVPE GROWN MATERIAL

被引：37

作者：

TIMMONS, ML

CHIANG, PK

HATTANGADY, SV

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1986年 / 77卷 / 1-3期

关键词：

D O I：

10.1016/0022-0248(86)90279-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

收藏

页码：37 / 41

页数：5

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[J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (04) : 1156 - 1159
[2] THE GROWTH OF MAGNESIUM-DOPED GAAS BY THE OM-VPE PROCESS
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[J]. JOURNAL OF ELECTRONIC MATERIALS, 1983, 12 (03) : 507 - 524
[3] METALORGANIC CHEMICAL VAPOR-DEPOSITION OF III-V SEMICONDUCTORS
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[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (08) : R31 - R55
[4] IONIZED MG DOPING IN MOLECULAR-BEAM EPITAXY OF GAAS
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SHINOZAKI, K
MIHARA, M
ISHII, M
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (04) : 1092 - 1095
[5] A STUDY OF P-TYPE DOPANTS FOR INP GROWN BY ADDUCT MOVPE
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WESTBROOK, LD
[J]. JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) : 102 - 110
[6] FACTORS INFLUENCING DOPING CONTROL AND ABRUPT METALLURGICAL TRANSITIONS DURING ATMOSPHERIC-PRESSURE MOVPE GROWTH OF ALGAAS AND GAAS
ROBERTS, JS
MASON, NJ
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[J]. JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) : 422 - 430