THE THERMODYNAMICS OF OXYGEN INCORPORATION INTO SEMICONDUCTOR-III-V COMPOUNDS AND ALLOYS IN MBE

[1] EFFECT OF H-2 ON RESIDUAL IMPURITIES IN GAAS MBE LAYERS [J]. APPLIED PHYSICS LETTERS, 1978, 33 (12) : 1020 - 1022

[2] CHAPLYGIN GV, 1975, RUSS J PHYS CHEM, V49, P1633

[3] MOLECULAR-BEAM EPITAXIAL-GROWTH OF UNIFORM IN0.53GA0.47AS ON INP WITH A COAXIAL IN-GA OVEN [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (02) : 1015 - 1021

[4] Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9

[5] EVAPORATION OF INP UNDER KNUDSEN (EQUILIBRIUM) AND LANGMUIR (FREE) EVAPORATION CONDITIONS [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1974, 7 (17) : 2436 - 2448

[6] EVAPORATION OF GAAS UNDER EQUILIBRIUM AND NONEQUILIBRIUM CONDITIONS USING A MODULATED BEAM TECHNIQUE [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1973, 34 (10) : 1693 - &

[7] GERMANIUM DOPING OF GALLIUM-ARSENIDE GROWN BY MOLECULAR-BEAM EPITAXY SOME THERMODYNAMIC ASPECTS [J]. JOURNAL OF CRYSTAL GROWTH, 1980, 50 (03) : 644 - 647

[8] INTERPLAY OF THERMODYNAMICS AND KINETICS IN MOLECULAR-BEAM EPITAXY (MBE) OF DOPED GALLIUM-ARSENIDE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (02) : 444 - 450

[9] ILEGEMS M, 1976, I PHYS C SER, V24, P1

[10] VOLATILE METAL-OXIDE INCORPORATION IN LAYERS OF GAAS, GA1-XALXAS AND RELATED-COMPOUNDS GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1981, 38 (06) : 427 - 429

[1] EFFECT OF H-2 ON RESIDUAL IMPURITIES IN GAAS MBE LAYERS [J]. APPLIED PHYSICS LETTERS, 1978, 33 (12) : 1020 - 1022

[2] CHAPLYGIN GV, 1975, RUSS J PHYS CHEM, V49, P1633

[3] MOLECULAR-BEAM EPITAXIAL-GROWTH OF UNIFORM IN0.53GA0.47AS ON INP WITH A COAXIAL IN-GA OVEN [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (02) : 1015 - 1021

[4] Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9

[5] EVAPORATION OF INP UNDER KNUDSEN (EQUILIBRIUM) AND LANGMUIR (FREE) EVAPORATION CONDITIONS [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1974, 7 (17) : 2436 - 2448

[6] EVAPORATION OF GAAS UNDER EQUILIBRIUM AND NONEQUILIBRIUM CONDITIONS USING A MODULATED BEAM TECHNIQUE [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1973, 34 (10) : 1693 - &

[7] GERMANIUM DOPING OF GALLIUM-ARSENIDE GROWN BY MOLECULAR-BEAM EPITAXY SOME THERMODYNAMIC ASPECTS [J]. JOURNAL OF CRYSTAL GROWTH, 1980, 50 (03) : 644 - 647

[8] INTERPLAY OF THERMODYNAMICS AND KINETICS IN MOLECULAR-BEAM EPITAXY (MBE) OF DOPED GALLIUM-ARSENIDE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (02) : 444 - 450

[9] ILEGEMS M, 1976, I PHYS C SER, V24, P1

[10] VOLATILE METAL-OXIDE INCORPORATION IN LAYERS OF GAAS, GA1-XALXAS AND RELATED-COMPOUNDS GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1981, 38 (06) : 427 - 429