BULK VERSUS SURFACE TRANSPORT OF NICKEL AND COBALT ON SILICON

被引：67

作者：

LEE, MY ^{[1
]}

BENNETT, PA ^{[1
]}

机构：

[1] ARIZONA STATE UNIV,DEPT PHYS & ASTRON,TEMPE,AZ 85287

来源：

PHYSICAL REVIEW LETTERS | 1995年 / 75卷 / 24期

关键词：

D O I：

10.1103/PhysRevLett.75.4460

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We compare directly the rates of bulk versus surface transport for Ni in and on Si(111) by depositing a laterally confined dot of Ni on one side of a double-polished and UHV cleaned Si wafer and then measuring the lateral Aug er profile on the reverse side following annealing and quenching. Ni reaches the far side of the wafer at temperatures as low as 550 degrees C via bulk diffusion with no measurable contribution from surface paths, which are short circuited by numerous, fast bulk paths. Similar results are found for Ni and Co on Si(111) and Si(100). Implications for silicide reactions in general are described.

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页码：4460 / 4463

页数：4

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