ULTRATHIN FILM GROWTH OF SILICIDES STUDIED USING MICROPROBE REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION AND AUGER

被引：14

作者：

BENNETT, PA

BUTLER, JR

TONG, X

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1989年 / 7卷 / 03期

关键词：

D O I：

10.1116/1.575952

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：2174 / 2179

页数：6

共 36 条

[1] NISI2 ON SI(111) .1. EFFECTS OF SUBSTRATE CLEANING PROCEDURE AND RECONSTRUCTION
AKINCI, G
OHNO, TR
WILLIAMS, ED
[J]. SURFACE SCIENCE, 1988, 193 (03) : 534 - 548
[2] ALLEN CW, 1986, MATER RES SOC S P, V54, P97
[3] BARBOUR JC, 1986, MATER RES SOC S P, V54, P29
[4] STACKING-FAULT MODEL FOR THE SI(111)-(7X7) SURFACE
BENNETT, PA
FELDMAN, LC
KUK, Y
MCRAE, EG
ROWE, JE
[J]. PHYSICAL REVIEW B, 1983, 28 (06): : 3656 - 3659
[5] ELECTRONIC-STRUCTURE OF NI AND PD ALLOYS .3. CORRELATION-EFFECTS IN THE AUGER-SPECTRA OF NI-ALLOYS
BENNETT, PA
FUGGLE, JC
HILLEBRECHT, FU
LENSELINK, A
SAWATZKY, GA
[J]. PHYSICAL REVIEW B, 1983, 27 (04) : 2194 - 2209
[6] PHASE-FORMATION DIAGRAM FOR PRECURSORS TO EPITAXIAL-GROWTH OF NISI2 ON SI(111)
BENNETT, PA
JOHNSON, AP
HALAWITH, BN
[J]. PHYSICAL REVIEW B, 1988, 37 (08): : 4268 - 4271
[7] CRYSTALLINE INTERMEDIATE PHASES IN THE FORMATION OF EPITAXIAL NISI2 ON SI(111)
BENNETT, PA
HALAWITH, BN
JOHNSON, AP
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04): : 2121 - 2126
[8] BENNETT PA, 1988, VAC SCI TECHNOL B, V6, P1336
[9] BUTLER JAV, UNPUB
[10] ELECTRONIC PROPERTIES OF SILICON-TRANSITION METAL INTERFACE COMPOUNDS
Calandra, C.
Bisi, O.
Ottaviani, G.
[J]. SURFACE SCIENCE REPORTS, 1985, 4 (5-6) : 271 - 364