THE PHYSICAL-PROPERTIES OF THIN AG-FILMS FORMED UNDER THE SIMULTANEOUS ION-IMPLANTATION IN THE SUBSTRATE

被引：10

作者：

PRANEVICHUS, L

TAMULEVICHUS, S

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH | 1983年 / 209卷 / MAY期

关键词：

D O I：

10.1016/0167-5087(83)90797-4

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：179 / 184

页数：6

共 8 条

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[2]

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[7] ION-BOMBARDMENT INDUCED INTERFACE MIXING IN THE AG-SI SYSTEM [J].

TOGNETTI, NP ;

WEBB, RP ;

CHRISTODOULIDES, CE ;

ARMOUR, DG ;

CARTER, G .

NUCLEAR INSTRUMENTS & METHODS, 1981, 182 (APR) :107-114

[8] ION-BEAM DEPOSITION OF SPECIAL FILM STRUCTURES [J].

WEISSMANTEL, C .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (02) :179-185

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