EFFECT OF DISORDER ON STRUCTURES DUE TO INTERBAND-TRANSITIONS IN SILICON

被引：8

作者：

GEDDO, M ^{[1
]}

MAGHINI, D ^{[1
]}

STELLA, A ^{[1
]}

机构：

[1] UNIV PAVIA,CTR INT UNIV STRUTTURA MAT,I-27100 PAVIA,ITALY

来源：

SOLID STATE COMMUNICATIONS | 1986年 / 58卷 / 07期

关键词：

D O I：

10.1016/0038-1098(86)90038-4

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：483 / 484

页数：2

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[2] OPTICAL STUDY OF SELF-ANNEALING IN HIGH-CURRENT ARSENIC-IMPLANTED SILICON [J].

BORGHESI, A ;

CHENJIA, C ;

GUIZZETTI, G ;

NOSENZO, L ;

STELLA, A ;

CAMPISANO, SU ;

RIMINI, E .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (07) :2773-2776

[3]

Cardona M., 1969, MODULATION SPECTROSC

[4]

EDWALD D, 1979, PHIL MAG B, V40, P291

[5] OPTICAL REFLECTIVITY OF ION-IMPLANTED AMORPHOUS GAAS [J].

GRASSO, V ;

MONDIO, G ;

SAITTA, G ;

CAMPISANO, SU ;

FOTI, G ;

RIMINI, E .

APPLIED PHYSICS LETTERS, 1978, 33 (07) :632-634

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