EXCITON LINE BROADENING IN ZNSEXTE1-X/GAAS

被引：5

作者：

LANKES, S

STANZL, H

WOLF, K

GIEGLER, M

GEBHARDT, W

机构：

[1] Inst. fur Festkorperphys., Regensburg Univ.

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 1995年 / 7卷 / 07期

关键词：

D O I：

10.1088/0953-8984/7/7/010

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Photoreflection (PR) measurements on ZnSexTe1-x epilayers were performed in the concentration range x less than or equal to 0.5 and 0.9 < x. The dependence of the E(0) band gap on the composition leads to a bowing parameter of b = 1.37 +/- 0.03 eV. Additional photoluminescence (PL) measurements were used to investigate the localization energy of excitons caused by compositional fluctuations. It is shown that the large broadening of excitons in the PR spectra can be explained by localization effects.

引用

页码：1287 / 1292

页数：6