MONTE-CARLO SIMULATION OF SI AND GAAS AVALANCHE ELECTRON EMITTING DIODES

被引：12

作者：

HIGMAN, JM

KIM, K

HESS, K

VANZUTPHEN, T

BOOTS, HMJ

机构：

[1] DELFT UNIV TECHNOL,DEPT APPL PHYS,2600 GA DELFT,NETHERLANDS

[2] PHILIPS RES LABS,5600 JA EINDHOVEN,NETHERLANDS

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 03期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.342988

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1384 / 1386

页数：3

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