THEORY OF HOT-ELECTRON EMISSION FROM SILICON INTO SILICON DIOXIDE

被引：62

作者：

TANG, JY

HESS, K

机构：

[1] UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801

[2] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 09期

关键词：

D O I：

10.1063/1.332738

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5145 / 5151

页数：7

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[7]

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[8] HOT-ELECTRON EMISSION FROM SILICON INTO SILICON DIOXIDE [J].

NING, TH .

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