FEATURES OF THE TRIGGERING MECHANISM FOR SINGLE EVENT BURNOUT OF POWER MOSFETS

被引:63
作者
HOHL, JH
JOHNSON, GH
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D O I
10.1109/23.45433
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:2260 / 2266
页数:7
相关论文
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[4]  
Sze S.M, 1981, PHYS SEMICONDUCTOR D, P45
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WARNER RM, 1983, TRANSISTORS FUNDAMEN, P478
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LONG, DM .
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