BURNOUT OF POWER MOS-TRANSISTORS WITH HEAVY-IONS OF CF-252

被引：105

作者：

WASKIEWICZ, AE ^{[1
]}

GRONINGER, JW ^{[1
]}

STRAHAN, VH ^{[1
]}

LONG, DM ^{[1
]}

机构：

[1] SCI APPLICAT INT CORP,SAN DIEGO,CA 92121

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1986年 / 33卷 / 06期

关键词：

D O I：

10.1109/TNS.1986.4334670

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1710 / 1713

页数：4

共 7 条

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[5] A COMPARISON OF HEAVY-ION SOURCES USED IN COSMIC-RAY SIMULATION STUDIES OF VLSI CIRCUITS [J].

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IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (06) :1069-1072

[6] INVESTIGATION OF HEAVY PARTICLE INDUCED LATCH-UP, USING A CF-252 SOURCE, IN CMOS SRAMS AND PROMS [J].

STEPHEN, JH ;

SANDERSON, TK ;

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HARDMAN, M ;

FARREN, J ;

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IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (06) :1207-1211

[7] CURRENT INDUCED AVALANCHE IN EPITAXIAL STRUCTURES [J].

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