HEAVY-ION INDUCED PERMANENT DAMAGE IN MNOS GATE INSULATORS

被引:10
作者
PICKEL, JC [1 ]
BLANDFORD, JT [1 ]
WASKIEWICZ, AE [1 ]
STRAHAN, VH [1 ]
机构
[1] ROCKWELL INT CORP,ANAHEIM,CA 92803
关键词
D O I
10.1109/TNS.1985.4334089
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:4176 / 4179
页数:4
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