COSMIC-RAY SIMULATION EXPERIMENTS FOR THE STUDY OF SINGLE EVENT UPSETS AND LATCH-UP IN CMOS MEMORIES

被引:22
作者
STEPHEN, JH [1 ]
SANDERSON, TK [1 ]
MAPPER, D [1 ]
FARREN, J [1 ]
HARBOESORENSEN, R [1 ]
ADAMS, L [1 ]
机构
[1] EUROPEAN SPACE AGCY,EUROPEAN SPACE RES & TECHNOL CTR,2200 AG NOORDWIJK,NETHERLANDS
关键词
D O I
10.1109/TNS.1983.4333155
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:4464 / 4469
页数:6
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