USE OF CF-252 TO DETERMINE PARAMETERS FOR SEU RATE CALCULATION

被引：21

作者：

BLANDFORD, JT

PICKEL, JC

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1985年 / 32卷 / 06期

关键词：

D O I：

10.1109/TNS.1985.4334109

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：4282 / 4286

页数：5

共 10 条

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[8] COSMIC-RAY SIMULATION EXPERIMENTS FOR THE STUDY OF SINGLE EVENT UPSETS AND LATCH-UP IN CMOS MEMORIES [J].

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[9] INVESTIGATION OF HEAVY PARTICLE INDUCED LATCH-UP, USING A CF-252 SOURCE, IN CMOS SRAMS AND PROMS [J].

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