INVESTIGATION OF HEAVY PARTICLE INDUCED LATCH-UP, USING A CF-252 SOURCE, IN CMOS SRAMS AND PROMS

被引：8

作者：

STEPHEN, JH ^{[1
]}

SANDERSON, TK ^{[1
]}

MAPPER, D ^{[1
]}

HARDMAN, M ^{[1
]}

FARREN, J ^{[1
]}

ADAMS, L ^{[1
]}

HARBOESORENSEN, R ^{[1
]}

机构：

[1] EUROPEAN SPACE AGCY,EUROPEAN SPACE RES & TECHNOL CTR,2200 AG NOORDWIJK,NETHERLANDS

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1984年 / 31卷 / 06期

关键词：

D O I：

10.1109/TNS.1984.4333484

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1207 / 1211

页数：5

共 5 条

[1] SIMULATION OF COSMIC-RAY INDUCED SOFT ERRORS AND LATCHUP IN INTEGRATED-CIRCUIT COMPUTER MEMORIES [J].

KOLASINSKI, WA ;

BLAKE, JB ;

ANTHONY, JK ;

PRICE, WE ;

SMITH, EC .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1979, 26 (06) :5087-5091

[2] USE OF A CF-252 SOURCE IN COSMIC-RAY SIMULATION STUDIES ON CMOS MEMORIES [J].

SANDERSON, TK ;

MAPPER, D ;

STEPHEN, JH ;

FARREN, J .

ELECTRONICS LETTERS, 1983, 19 (10) :373-374

[3] LATCHUP IN CMOS DEVICES FROM HEAVY-IONS [J].

SOLIMAN, K ;

NICHOLS, DK .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1983, 30 (06) :4514-4519

[4] A COMPARISON OF HEAVY-ION SOURCES USED IN COSMIC-RAY SIMULATION STUDIES OF VLSI CIRCUITS [J].

STEPHEN, JH ;

SANDERSON, TK ;

MAPPER, D ;

FARREN, J ;

HARBOESORENSEN, R ;

ADAMS, L .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (06) :1069-1072

[5] COSMIC-RAY SIMULATION EXPERIMENTS FOR THE STUDY OF SINGLE EVENT UPSETS AND LATCH-UP IN CMOS MEMORIES [J].

STEPHEN, JH ;

SANDERSON, TK ;

MAPPER, D ;

FARREN, J ;

HARBOESORENSEN, R ;

ADAMS, L .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1983, 30 (06) :4464-4469

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