DOPANT PASSIVATION IN AIINAS AND INGAP BY ATOMIC DEUTERIUM

被引：4

作者：

PEARTON, SJ ^{[1
]}

KUO, JM ^{[1
]}

HOBSON, WS ^{[1
]}

LOPATA, J ^{[1
]}

REN, F ^{[1
]}

KATZ, A ^{[1
]}

GEVA, M ^{[1
]}

机构：

[1] AT&T BELL LABS,CTR SOLID STATE TECHNOL,BREINIGSVILLE,PA 18031

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 21期

关键词：

D O I：

10.1063/1.105890

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Shallow dopant passivation in AlInAs and InGaP exposed to low power (0.08 W cm-2) deuterium plasmas was investigated by Hall effect and secondary ion mass spectrometry measurements. The carrier concentration in AlInAs was reduced by factors of 3-4 in both Si- and Zn-doped epitaxial layers upon exposure to a D2 plasma at 200-degrees-C. Substantially greater reductions are observed in Si-doped InGaP (500 X reduction) and Be-doped InGaP (15 X reduction) under the same conditions. Complete reactivation of all the passivated dopants occurs in the temperature range 350-425-degrees-C for annealing in inert ambients. By contrast, the use of hydrogen containing ambients during post-plasma annealing enhances the apparent stability of the dopant passivation. The diffusivity of deuterium is greater in p-type layers than in n-type layers for each material.

引用

页码：2703 / 2705

页数：3

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