ULTRA-STABLE SYSTEM FOR RF SPUTTERING WITH RF-INDUCED SUBSTRATE BIAS

被引：8

作者：

VOSSEN, JL ^{[1
]}

ONEILL, JJ ^{[1
]}

机构：

[1] RCA CORP,DAVID SARNOFF RES CTR,PRINCETON,NJ 08540

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1975年 / 12卷 / 05期

关键词：

D O I：

10.1116/1.568461

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1052 / 1057

页数：6

共 21 条

[1]

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[3]

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[4]

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LOGAN, JS .

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[6] METAL EDGE COVERAGE AND CONTROL OF CHARGE ACCUMULATION IN RF SPUTTERED INSULATORS [J].

LOGAN, JS ;

MADDOCKS, FS ;

DAVIDSE, PD .

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[7] ELECTRICAL CHARACTERIZATION OF RADIO-FREQUENCY SPUTTERING GAS DISCHARGE [J].

LOGAN, JS ;

MAZZA, NM ;

DAVIDSE, PD .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1969, 6 (01) :120-&

[8]

LOGAN JS, 1971, Patent No. 3617459

[9] AUTOMATIC IMPEDANCE MATCHING SYSTEM FOR RF SPUTTERING [J].

MAZZA, NM .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (02) :192-&

[10]

MCDOWELL RB, 1969, SOLID STATE TECHNOL, V12, P23

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