OXYGEN-VACANCY COMPLEX IN SILICON .2. O-17 ELECTRON-NUCLEAR DOUBLE-RESONANCE

被引:9
作者
VANKEMP, R
SPRENGER, M
SIEVERTS, EG
AMMERLAAN, CAJ
机构
来源
PHYSICAL REVIEW B | 1989年 / 40卷 / 06期
关键词
D O I
10.1103/PhysRevB.40.4054
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
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页码:4054 / 4061
页数:8
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共 30 条
[1]   MAGNETIC DIPOLE-DIPOLE HYPERFINE INTEGRALS FOR SLATER-TYPE ORBITALS [J].
AMMERLAAN, CAJ ;
WOLFRAT, JC .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1978, 89 (02) :541-546
[2]   PARAMAGNETIC RESONANCE IN ELECTRON IRRADIATED SILICON [J].
BEMSKI, G .
JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) :1195-1198
[3]   ABSORPTION OF OXYGEN IN SILICON IN NEAR AND FAR INFRARED [J].
BOSOMWORTH, DR ;
HAYES, W ;
SPRAY, ARL ;
WATKINS, GD .
PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1970, 317 (1528) :133-+
[4]   O-17 HYPERFINE-STRUCTURE OF NEUTRAL (S=1) VACANCY-OXYGEN CENTER IN ION-IMPLANTED SILICON [J].
BROWER, KL .
PHYSICAL REVIEW B, 1972, 5 (11) :4274-&
[5]   ELECTRON PARAMAGNETIC RESONANCE OF NEUTRAL (S=1) ONE-VACANCY-OXYGEN CENTER IN IRRADIATED SILICON [J].
BROWER, KL .
PHYSICAL REVIEW B, 1971, 4 (06) :1968-&
[6]   MANY-ELECTRON TREATMENT OF THE OFF-CENTER SUBSTITUTIONAL O IN SI [J].
CANUTO, S ;
FAZZIO, A .
PHYSICAL REVIEW B, 1986, 33 (06) :4432-4435
[7]   DEFECTS IN IRRADIATED SILICON .2. INFRARED ABSSORPTION OF SI-A CENTER [J].
CORBETT, JW ;
WATKINS, GD ;
CHRENKO, RM ;
MCDONALD, RS .
PHYSICAL REVIEW, 1961, 121 (04) :1015-&
[8]  
DAS TP, 1958, NUCLEAR QUADRUPOLE R, V1
[9]   THEORY OF OFF-CENTER IMPURITIES IN SILICON - SUBSTITUTIONAL NITROGEN AND OXYGEN [J].
DELEO, GG ;
FOWLER, WB ;
WATKINS, GD .
PHYSICAL REVIEW B, 1984, 29 (06) :3193-3207
[10]  
Fuller G. H., 1976, Journal of Physical and Chemical Reference Data, V5, P835, DOI 10.1063/1.555544