EVALUATION OF THE INFLUENCE OF PROCESS FACTORS ON PLASMA DEVELOPED X-RAY RESIST PROPERTIES

被引：9

作者：

TAYLOR, GN

HELLMAN, MY

FEATHER, MD

WILLENBROCK, WE

机构：

来源：

关键词：

D O I：

10.1002/pen.760231811

中图分类号：

TQ [化学工业];

学科分类号：

0817 ;

摘要：

引用

页码：1029 / 1038

页数：10

共 9 条

[1]

HELLMAN MY, 1981, LIQUID CHROMATOGRAPH, V19, P115

[2]

HELMAN MY, UNPUB J APPL POLYM S

[3]

ROBERTS RL, UNPUB

[4] PLASMA-DEVELOPED X-RAY RESISTS [J].

TAYLOR, GN ;

WOLF, TM .

[5] ORGANO-SILICON MONOMERS FOR PLASMA-DEVELOPED X-RAY RESISTS [J].

TAYLOR, GN ;

WOLF, TM ;

MORAN, JM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04) :872-880

[6] A NEGATIVE-WORKING PLASMA-DEVELOPED PHOTORESIST [J].

TAYLOR, GN ;

WOLF, TM ;

GOLDRICK, MR .

[7]

TAYLOR GN, 1981, SEP P INT C MICR LAU

[8]

TAYLOR GN, 1982, JAN P E T EL ADV PLA, P44

[9]

TAYLOR GN, POLYM ENG SCI