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EFFECTS OF [H2SE] [DMZN] MOLAR RATIO ON EPITAXIAL ZNSE FILMS GROWN BY LOW-PRESSURE MOCVD

被引：18
作者：
YOSHIKAWA, A
TANAKA, K
YAMAGA, S
KASAI, H
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1984年 / 23卷 / 10期
关键词：
D O I：
10.1143/JJAP.23.L773
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：L773 / L775
页数：3
相关论文
共 7 条
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[6]   NEW AND SIMPLE MOCVD TECHNIQUE USING COMPLETELY GASEOUS MO-SOURCES ESPECIALLY USEFUL FOR GROWING ZN-CHALCOGENIDE FILMS [J].
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