CHARACTERIZATION OF AN INDIVIDUAL SI THIN-LAYER BURIED IN GAAS (001) USING RAMAN-SPECTROSCOPY

被引：12

作者：

TANINO, H

AMANO, S

KAWANAMI, H

MATSUHATA, H

机构：

[1] Electrotechnical Laboratory, Tsukuba, Ibaraki 305

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 70卷 / 11期

关键词：

D O I：

10.1063/1.349787

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present a Raman scattering study of a 10-layer-thick Si film grown epitaxially on GaAs (001) and covered by GaAs. The downshift of the optical phonon mode of Si is described in terms of the planar biaxially tensile strains in the Si thin layer. The broadening to the lower-energy side is explained by the confinement effect. The layer is grown pseudomorphic on GaAs with partial lattice relaxation.

引用

页码：7068 / 7072

页数：5

共 28 条

[1] CHARACTERIZATION OF GAAS GROWN ON SI EPITAXIAL LAYERS ON GAAS SUBSTRATES
ADOMI, K
STRITE, S
MORKOC, H
NAKAMURA, Y
OTSUKA, N
[J]. JOURNAL OF APPLIED PHYSICS, 1991, 69 (01) : 220 - 225
[2] GROWTH AND PROPERTIES OF SINGLE DOMAIN GAAS, ALGAAS AND THEIR HETEROSTRUCTURES ON SI BY MOCVD AND MBE
AKIYAMA, M
NISHI, S
KAMINISHI, K
[J]. SURFACE SCIENCE, 1986, 174 (1-3) : 19 - 30
[3] EFFECT OF STATIC UNIAXIAL STRESS ON RAMAN SPECTRUM OF SILICON
ANASTASSAKIS, E
PINCZUK, A
BURSTEIN, E
POLLAK, FH
CARDONA, M
[J]. SOLID STATE COMMUNICATIONS, 1970, 8 (02) : 133 - +
[4] THE EFFECTS OF MICROCRYSTAL SIZE AND SHAPE ON THE ONE PHONON RAMAN-SPECTRA OF CRYSTALLINE SEMICONDUCTORS
CAMPBELL, IH
FAUCHET, PM
[J]. SOLID STATE COMMUNICATIONS, 1986, 58 (10) : 739 - 741
[5] FOLDED, CONFINED, INTERFACE, SURFACE, AND SLAB VIBRATIONAL-MODES IN SEMICONDUCTOR SUPERLATTICES
CARDONA, M
[J]. SUPERLATTICES AND MICROSTRUCTURES, 1989, 5 (01) : 27 - 42
[6] STRESS-INDUCED SHIFTS OF FIRST-ORDER RAMAN FREQUENCIES OF DIAMOND AND ZINC-BLENDE-TYPE SEMICONDUCTORS
CERDEIRA, F
BUCHENAUER, CJ
CARDONA, M
POLLAK, FH
[J]. PHYSICAL REVIEW B-SOLID STATE, 1972, 5 (02): : 580 - +
[7] BONDING DIRECTION AND SURFACE-STRUCTURE ORIENTATION ON GAAS (001)
CHO, AY
[J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (07) : 2841 - 2843
[8] DOBSON PJ, 1982, SURF SCI, V119, pL339, DOI 10.1016/0039-6028(82)90177-7
[9] FISHER R, 1985, J APPL PHYS, V58, P374
[10] RAMAN-STUDY OF AN EPITAXIAL GAAS LAYER ON A SI[100] SUBSTRATE
HUANG, YH
YU, PY
CHARASSE, MN
LO, YH
WANG, S
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (03) : 192 - 194

← 1 2 3 →