AN INTEGRATED SENSOR FOR INVASIVE BLOOD-VELOCITY MEASUREMENT

被引:21
作者
KERSJES, R
EICHHOLZ, J
LANGERBEIN, A
MANOLI, Y
MOKWA, W
机构
[1] Fraunhofer Institute of Microelectronic Circuits and Systems, W-4100 Duisburg 1
关键词
D O I
10.1016/0924-4247(93)80114-V
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Invasive measurements of physical parameters in blood are very important for the intensive care. The integrated flow sensor presented here has been developed as a part of an 'intelligent catheter' for measuring certain blood parameters. The sensor is based on the principle of hot-film anemometry. The temperature difference on a chip is measured by two diodes. One diode is heated by means of a polysilicon resistor in close proximity. This diode is (for thermal insulation) placed on a 5 mum x 260 mum x 260 mum silicon membrane. For the membrane formation the implanted oxide layer of SIMOX substrates (Separation by Implanted Oxygen) was used as a stop for backside etching. This technique allows batch processing and is compatible with a standard CMOS process. In addition, electronic CMOS devices can be mounted directly into the membrane. Switched capacitor circuits are used for sensor read-out electronics. The differential voltage at the diodes is amplified by means of a two-stage operational amplifier with an overall amplification of 238. The total chip size amounts to 1 mm x 5 mm. A change of flow velocity from 0 to 80 cm/s results in a change of the pulse width of 20 mus for a maximal chip temperature of 13 K relative to the ambient.
引用
收藏
页码:674 / 678
页数:5
相关论文
共 7 条
[1]   AN ULTRASENSITIVE SILICON PRESSURE-BASED MICROFLOW SENSOR [J].
CHO, ST ;
NAJAFI, K ;
LOWMAN, CE ;
WISE, KD .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (04) :825-835
[2]  
DURA HG, 1992, 5TH INT S SIL INS TE
[3]   THE DYNAMIC MECHANICAL CHARACTERISTICS OF A RESONATING MICROBRIDGE MASS-FLOW SENSOR [J].
GEIJSELAERS, HJM ;
TIJDEMAN, H .
SENSORS AND ACTUATORS A-PHYSICAL, 1991, 29 (01) :37-41
[4]  
KORDAS N, 1990, 1ST P INT C MICR TEC, P716
[5]  
MANOLI Y, 1991, INT C IEEE ENG MED B, V13, P1599
[6]   A CMOS INTEGRATED SILICON GAS-FLOW SENSOR WITH PULSE-MODULATED OUTPUT [J].
STEMME, G .
SENSORS AND ACTUATORS, 1988, 14 (03) :293-303
[7]  
van Oudheusden B.W., 1990, SENSOR ACTUAT A-PHYS, VA21-A23, P425