A CMOS INTEGRATED SILICON GAS-FLOW SENSOR WITH PULSE-MODULATED OUTPUT

被引：22

作者：

STEMME, G

机构：

[1] Chalmers Univ of Technology, Goteborg, Swed, Chalmers Univ of Technology, Goteborg, Swed

来源：

SENSORS AND ACTUATORS | 1988年 / 14卷 / 03期

关键词：

SEMICONDUCTOR DEVICES; MOS;

D O I：

10.1016/0250-6874(88)80075-1

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

An on-chip integrated thermal gas-flow sensor with pulse-modulated output where the pulse-width ratio is related to the flow velocity has been developed. The sensor was fabricated in a standard CMOS process, except for the shaping of the sensor, which was accomplished using an EDP anisotropic etchant. Polyimide was used as thermal insulator between the heated and non-heated parts of the sensor. An internal gas-temperature compensation was built in. The gas flow sensitivity is 3%/m/s in the 2 - 30 m/s range. The design of the sensor also makes it suitable for use in a two-wire arrangement.

引用

收藏

页码：293 / 303

页数：11

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