ELECTRON-PARAMAGNETIC RESONANCE OF SILICON IMPLANTED WITH BORON AND ARSENIC IONS

被引：2

作者：

GREGORKIEWICZ, T

机构：

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1983年 / 77卷 / 3-4期

关键词：

D O I：

10.1080/00337578308228186

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

引用

页码：195 / 203

页数：9

共 18 条

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[7] ELECTRON PARAMAGNETIC RESONANCE IN ION IMPLANTED SILICON [J].

DALY, DF ;

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[8] ELECTRON-SPIN RESONANCE STUDIES ON ION-IMPLANTED SILICON .1. AMORPHIZATION [J].

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ICHIDA, K ;

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[9] SPIN-1 CENTERS IN NEUTRON-IRRADIATED SILICON [J].

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[10]

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