SE-DOPED ALGAAS/GAAS HEMTS FOR STABLE LOW-TEMPERATURE OPERATION

被引：7

作者：

YOKOYAMA, T

SUZUKI, M

MAEDA, T

ISHIKAWA, T

MIMURA, T

ABE, M

机构：

[1] Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya

来源：

IEEE ELECTRON DEVICE LETTERS | 1990年 / 11卷 / 05期

关键词：

D O I：

10.1109/55.55248

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We fabricated Se-doped AlGaAs/GaAs high electron mobility transistors (HEMT’s) for the first time. Because the DX center concentration in Se-doped AlGaAs layers is lower than in Si-doped layers, the drain current collapsed much less at 77 K, allowing for IC applications at low temperatures. © 1990 IEEE

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页码：197 / 199

页数：3

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