SELECTIVELY SE-DOPED ALGAAS/GAAS HETEROSTRUCTURES WITH REDUCED DX CENTER CONCENTRATIONS GROWN BY MOLECULAR-BEAM EPITAXY

被引：8

作者：

ISHIKAWA, T

MAEDA, T

KONDO, K

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 20期

关键词：

D O I：

10.1063/1.100347

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1926 / 1927

页数：2

共 11 条

[1] DEEP DONOR MODEL FOR THE PERSISTENT PHOTOCONDUCTIVITY EFFECT [J].

HJALMARSON, HP ;

DRUMMOND, TJ .

APPLIED PHYSICS LETTERS, 1986, 48 (10) :656-658

[2] FORMATION OF DX CENTERS BY HEAVY SI DOPING IN MBE-GROWN ALXGA1-XAS WITH LOW A1 CONTENT [J].

ISHIKAWA, T ;

YAMAMOTO, T ;

KONDO, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (06) :L484-L486

[3] ON THE LOW-TEMPERATURE DEGRADATION OF (ALGA)AS/GAAS MODULATION-DOPED FIELD-EFFECT TRANSISTORS [J].

KASTALSKY, A ;

KIEHL, RA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (03) :414-423

[4] CHEMICAL TRENDS IN THE ACTIVATION-ENERGIES OF DX CENTERS [J].

KUMAGAI, O ;

KAWAI, H ;

MORI, Y ;

KANEKO, K .

APPLIED PHYSICS LETTERS, 1984, 45 (12) :1322-1323

[5] TRAPPING CHARACTERISTICS AND A DONOR-COMPLEX (DX) MODEL FOR THE PERSISTENT PHOTOCONDUCTIVITY TRAPPING CENTER IN TE-DOPED ALXGA1-XAS [J].

LANG, DV ;

LOGAN, RA ;

JAROS, M .

PHYSICAL REVIEW B, 1979, 19 (02) :1015-1030

[6]

MAEDA T, UNPUB

[7] DIRECT EVIDENCE FOR THE DX CENTER BEING A SUBSTITUTIONAL DONOR IN ALGAAS ALLOY SYSTEM [J].

MIZUTA, M ;

TACHIKAWA, M ;

KUKIMOTO, H ;

MINOMURA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (02) :L143-L146

[8] DX CENTER - CROSSOVER OF DEEP AND SHALLOW STATES IN SI-DOPED ALXGA1-XAS [J].

OSHIYAMA, A ;

OHNISHI, S .

PHYSICAL REVIEW B, 1986, 33 (06) :4320-4323

[9] SHALLOW AND DEEP DONORS IN DIRECT-GAP N-TYPE ALXGA1-XAS-SI GROWN BY MOLECULAR-BEAM EPITAXY [J].

SCHUBERT, EF ;

PLOOG, K .

PHYSICAL REVIEW B, 1984, 30 (12) :7021-7029

[10] SURFACE EXCHANGE DOPING OF MBE GAAS FROM S AND SE CAPTIVE SOURCES [J].

WOOD, CEC .

APPLIED PHYSICS LETTERS, 1978, 33 (08) :770-772

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