PLASMA-ETCHING OF CVD GROWN CUBIC SIC SINGLE-CRYSTALS

Plasma etching of CVD grown cubic SiC single crystals with CF//4 plus O//2 mixture gas was investigated for the first time. The O//2 gas composition, rf power and pressure dependence of the etching rate were clarified. The maximum etching rate was obtained with the O//2 gas composition of 67%. The ratio of the etching rate between cubic SiC and Cr was found to be about 8. 3, which indicates Cr as a good etching mask for cubic SiC.