CHARGED-IMPURITY-LIMITED MOBILITY FOR A VERY PURE SEMICONDUCTOR

被引：5

作者：

FUJITA, S

机构：

[1] UNIV GRAZ, INST THEORET PHYS, GRAZ, AUSTRIA

[2] SUNY Buffalo, DEPT PHYS & ASTRON, BUFFALO, NY 14214 USA

来源：

SOLID STATE COMMUNICATIONS | 1975年 / 17卷 / 08期

关键词：

D O I：

10.1016/0038-1098(75)90218-5

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：915 / 917

页数：3

共 14 条

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