IMPURITY PROFILES WITHIN A SHALLOW P-N-JUNCTION BY A NEW DIFFERENTIAL SPREADING RESISTANCE METHOD

被引：7

作者：

KUDOH, O ^{[1
]}

UDA, K ^{[1
]}

IKUSHIMA, Y ^{[1
]}

KAMOSHIDA, M ^{[1
]}

机构：

[1] NIPPON ELECT CO LTD,IC DIV,KAWASAKI 211,JAPAN

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1976年 / 123卷 / 11期

关键词：

D O I：

10.1149/1.2132684

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1751 / 1754

页数：4

共 17 条

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[2]

DICKEY DH, ASR100 MAN

[3]

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[4]

DICKEY DH, 1975, OCT EL SOC M DALL

[5]

FONASH SJ, NBS40010 SPEC PUBL

[6]

GIBBONS JF, 1975, PROJECTED RANGE STAT

[7] RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON [J].

IRVIN, JC .

BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02) :387-+

[8]

JOHNSON WS, 1970, LSS PROJECTED RANGE

[9] A SPREADING RESISTANCE TECHNIQUE FOR RESISTIVITY MEASUREMENTS ON SILICON [J].

MAZUR, RG ;

DICKEY, DH .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (03) :255-&

[10]

MYLROIE SW, 1972, 3RD P INT C ION IMPL, P243

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