DECORATION OF SEMICONDUCTOR SURFACES FOR ELECTRON MICROSCOPY BY DISPLACEMENT DEPOSITION OF GOLD

被引：9

作者：

COUTTS, MD

REVESZ, AG

机构：

来源：

关键词：

D O I：

10.1063/1.1703194

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3280 / &

共 23 条

ALLEN, FG ;

GOBELI, GW .

BASSETT, GA .

PHILOSOPHICAL MAGAZINE, 1958, 3 (33) :1042-&

[3]

BASSETT GA, 1958, DISCUSSIONS FARADAY, V28, P7

BETHGE, H .

PHYSICA STATUS SOLIDI, 1962, 2 (07) :775-820

[5]

BRADLEY DE, 1961, TECHNIQUES ELECTRON, P82

[6]

BRATTAIN WH, 1963, P C PHYSICS SEMICOND, P797

[7]

DELAHAY P, 1963, ADVANCES ELECTROC ED, V3, P123

[8]

FLEISCHMANN H, 1963, ADVANCES ELECTROCHEM, V3, P123

[9] TRANSMISSION ELECTRON MICROSCOPY OF CLEAVED SILICON [J].

FRANKL, DR .

GOBELI, GW ;

ALLEN, FG .