JOSEPHSON JUNCTION TECHNOLOGIES FOR HIGH-SPEED DIGITAL APPLICATIONS

[21] OKADA Y, 1984, B ELECTROTECHNICAL L, V49, P65

[22] ALL REFRACTORY JOSEPHSON TUNNEL-JUNCTIONS FABRICATED BY REACTIVE ION ETCHING [J]. IEEE TRANSACTIONS ON MAGNETICS, 1983, 19 (03) : 827 - 830

[23] NEW FABRICATION PROCESS FOR JOSEPHSON TUNNEL-JUNCTIONS WITH (NIOBIUM NITRIDE, NIOBIUM) DOUBLE-LAYERED ELECTRODES [J]. APPLIED PHYSICS LETTERS, 1982, 41 (11) : 1097 - 1099

[24] LOGIC DELAYS OF 5-MU-M RESISTOR COUPLED JOSEPHSON LOGIC [J]. APPLIED PHYSICS LETTERS, 1982, 41 (09) : 886 - 888

[25] Sone J., 1982, International Electron Devices Meeting. Technical Digest, P762

[26] TAHARA S, 1984 APPL SUP C

[27] CURRENT INJECTION LOGIC GATE WITH 4 JOSEPHSON-JUNCTIONS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 : 607 - 611

[21] OKADA Y, 1984, B ELECTROTECHNICAL L, V49, P65

[22] ALL REFRACTORY JOSEPHSON TUNNEL-JUNCTIONS FABRICATED BY REACTIVE ION ETCHING [J]. IEEE TRANSACTIONS ON MAGNETICS, 1983, 19 (03) : 827 - 830

[23] NEW FABRICATION PROCESS FOR JOSEPHSON TUNNEL-JUNCTIONS WITH (NIOBIUM NITRIDE, NIOBIUM) DOUBLE-LAYERED ELECTRODES [J]. APPLIED PHYSICS LETTERS, 1982, 41 (11) : 1097 - 1099

[24] LOGIC DELAYS OF 5-MU-M RESISTOR COUPLED JOSEPHSON LOGIC [J]. APPLIED PHYSICS LETTERS, 1982, 41 (09) : 886 - 888

[25] Sone J., 1982, International Electron Devices Meeting. Technical Digest, P762

[26] TAHARA S, 1984 APPL SUP C

[27] CURRENT INJECTION LOGIC GATE WITH 4 JOSEPHSON-JUNCTIONS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 : 607 - 611